Reducing the Nonlinearity and Harmonic Distortion in FD-SOI CMOS Current-Starved Inverters and VCROs

This paper demonstrates experimentally how to reduce the nonlinearity of some analog and mixed-signal circuits by using enhanced body effect provided Fully-Depleted Silicon on Insulator (FD-SOI) CMOS technology. A current-starved inverter a Voltage-Controlled Ring Oscillator (VCRO) are considered as case studies. The is configured simple amplifier stage in which harmonic distortion can be reduced even removed combined action control voltages applied at gate bulk terminals current-source transistors. used basic building block VCRO, where more linear voltage-to-frequency characteristic achieved if terminal voltage oscillator. under study have been designed fabricated 28-nm FD-SOI technology experimental results shown validate presented approach.